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| FDC610PZ P-Channel PowerTrench(R) MOSFET August 2007 FDC610PZ P-Channel PowerTrench(R) MOSFET -30V, -4.9A, 42m Features Max rDS(on) = 42m at VGS = -10V, ID = -4.9A Max rDS(on) = 75m at VGS = -4.5V, ID = -3.7A Low gate charge (17nC typical). High performance trench technology for extremely low rDS(on). SuperSOTTM -6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick). RoHS Compliant tm General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Application DC - DC Conversion S D D D G D Pin 1 D G D 1 2 3 3 6 5 4 D D S SuperSOTTM -6 MOSFET Maximum Ratings TA= 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings -30 25 -4.9 -20 1.6 0.8 -55 to +150 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient (Note 1a) (Note 1b) 78 156 C/W Package Marking and Ordering Information Device Marking .610Z Device FDC610PZ Package SSOT6 Reel Size 7'' Tape Width 8mm Quantity 3000units (c)2007 Fairchild Semiconductor Corporation FDC610PZ Rev.B 1 www.fairchildsemi.com FDC610PZ P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -22 -1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.7A VGS = -10V, ID = -4.9A, TJ = 125C VDD = -10V, ID = -4.9A -1 -2.2 6 36 58 50 15 42 75 60 S m -3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 755 145 125 13 1005 195 190 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -4.5V VDD = -15V, ID = -4.9A VDD = -15V, ID = -4.9A VGS = -10V, RGEN = 6 7 4 33 23 17 9 2.9 4.3 14 10 53 37 24 13 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage VGS = 0V, IS = -1.3A Reverse Recovery Time Reverse Recovery Charge (Note 2) -0.8 19 9 -1.3 -1.2 35 18 A V ns nC IF = -4.9A, di/dt = 100A/s Notes: 1. RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78C/W when mounted on a 1 in2 pad of 2 oz copper. b. 156C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDC610PZ Rev.B 2 www.fairchildsemi.com FDC610PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 20 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 VGS = -5V VGS = -10V VGS = -4V VGS = -3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 15 VGS = -10V VGS = -5V VGS = -4.5V 10 VGS = -4V VGS = -4.5V 5 VGS = -3.5V 0 0 1 2 3 4 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = -4.9A VGS = -10V ID = -4.9A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 150 rDS(on), DRAIN TO 100 TJ = 125oC 50 TJ = 25oC -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 3 4 5 6 7 8 9 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 20 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 20 10 VGS = 0V -ID, DRAIN CURRENT (A) 15 VDD = -5V 1 TJ = 150oC 10 TJ = 150oC 0.1 TJ = 25oC 5 TJ = 25oC TJ = -55oC 0.01 TJ = -55oC 0 1 2 3 4 5 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDC610PZ Rev.B 3 www.fairchildsemi.com FDC610PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) 2000 ID = -4.9A 8 6 4 2 0 VDD = -15V VDD = -20V 1000 CAPACITANCE (pF) VDD = -10V Ciss Coss Crss 100 50 0.1 f = 1MHz VGS = 0V 0 4 8 12 16 20 1 10 30 Qg, GATE CHARGE(nC) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 5 4 3 2 1 0 Figure 8. Capacitance vs Drain to Source Voltage 30 10 -Ig, GATE LEAKAGE CURRENT(uA) 10 10 10 10 10 10 10 VDS = 0V -ID, DRAIN CURRENT (A) 10 100us 1ms TJ = 150oC 1 SINGLE PULSE TJ = MAX RATED 10ms 100ms 1s 10s DC -1 -2 -3 TJ = 25oC 0.1 RJA = 156oC/W TA = 25 C THIS AREA IS LIMITED BY rDS(on) o 10 0 5 10 15 20 25 30 35 0.01 0.1 1 10 100 -VGS, GATE TO SOURCE VOLTAGE (V) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Gate Leakage Current vs Gate to Source Voltage 1000 VGS = -10V P(PK), PEAK TRANSIENT POWER (W) Figure 10. Forward Bias Safe Operating Area SINGLE PULSE RJA = 156oC/W TA = 25oC 100 10 1 0.5 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation FDC610PZ Rev.B 4 www.fairchildsemi.com FDC610PZ P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE RJA = 156 C/W o t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 1E-3 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 12. Transient Thermal Response Curve FDC610PZ Rev.B 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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